Parametric generation of submillimeter radiation in semiconductors in the field of a bichromatic pulse

The self‐consistent problem of the interaction of three collinear laser pulses with frequencies ω 1 , ω 2 , ω 3 , propagating in a semiconductor, is discussed. The quasi‐energy spectrum of the semiconductor is determined for the excitation frequencies ω 1 , ω 2 ⪆ E g /ħ, where E g is the forbidden band width, and ω 3 = ω 2 – ω 1 ≪ E g /ħ. The problem of resonance parametric generation of the difference frequency ω 3 is considered on the basis of an exact expression for the semiconductor polarization. The possibility of submillimeter radiation generation in semiconductors with E g ≈ ≈ 0.1 eV is shown. The efficiency of a conversion of the corresponding process is determined.