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Parametric generation of submillimeter radiation in semiconductors in the field of a bichromatic pulse
Author(s) -
Avetissian S. K.,
Kazarian E. M.,
Melikian A. O.,
Minasian H. R.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221160206
Subject(s) - semiconductor , parametric statistics , physics , polarization (electrochemistry) , excitation , laser , atomic physics , radiation , optics , optoelectronics , chemistry , quantum mechanics , mathematics , statistics
The self‐consistent problem of the interaction of three collinear laser pulses with frequencies ω 1 , ω 2 , ω 3 , propagating in a semiconductor, is discussed. The quasi‐energy spectrum of the semiconductor is determined for the excitation frequencies ω 1 , ω 2 ⪆ E g /ħ, where E g is the forbidden band width, and ω 3 = ω 2 – ω 1 ≪ E g /ħ. The problem of resonance parametric generation of the difference frequency ω 3 is considered on the basis of an exact expression for the semiconductor polarization. The possibility of submillimeter radiation generation in semiconductors with E g ≈ ≈ 0.1 eV is shown. The efficiency of a conversion of the corresponding process is determined.