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The energy dependence of the angles of resonance dechanneling of ions in the 〈110〉→(110) axial‐to‐planar channeling transition in silicon
Author(s) -
Bulgakov Yu. V.,
Lenkeit K.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221160148
Subject(s) - silicon , physics , planar , energy (signal processing) , state (computer science) , condensed matter physics , engineering physics , atomic physics , computer science , quantum mechanics , computer graphics (images) , optoelectronics , algorithm
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