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Theory of intrinsic recombination at zero temperature in small gap semiconductors
Author(s) -
Mocker M.,
Beiler Marion
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221160125
Subject(s) - auger effect , excitation , recombination , radiative transfer , doping , physics , atomic physics , spontaneous emission , semiconductor , range (aeronautics) , zero (linguistics) , condensed matter physics , auger , chemistry , materials science , optics , quantum mechanics , laser , biochemistry , linguistics , philosophy , composite material , gene
A theory of intrinsic recombination at zero temperature is developed. Numerical results in a wide range of excitation and doping concentrations are given for a model adapted to PbS 0.1 Se 0.9 . In order that first‐order Auger recombination is possible a minimum value of majority carrier concentration has to be reached. Consequently, a finite small signal lifetime only exists if doping concentration N D > N D min , where for PbS 0.1 Se 0.9 N D min ≈ 4.5 × 10 18 cm −3 in case of parabolic model and N Dmin ≈ 9 × 10 19 cm −3 in case of Kane model of band structure. Radiative recombination rate only depends on minority carrier concentration p . At strong excitation the radiative lifetime behaves like p −213 in parabolic and like p −113 in Kane band approximation. Quantum efficiency η of radiative processes in dependence on N D decreases steplike near N D ≈ N D min .