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Defect states in amorphous silicon
Author(s) -
Ishii N.,
Kumeda M.,
Shimizu T.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221160112
Subject(s) - dangling bond , amorphous solid , amorphous silicon , materials science , silicon , exponential decay , electron , hyperfine structure , atomic physics , exponential function , molecular physics , crystallography , physics , chemistry , crystalline silicon , nuclear physics , optoelectronics , mathematical analysis , mathematics
The nature of defects in amorphous silicon is calculated by using several methods for clusters with varying size. The wave function of the dangling bond state has an approximately exponential decay with a decay length of about 0.2 nm. The correlation energy of electrons and the hyperfine structure constant with 29 Si for the dangling bond state are evaluated. The correlation energy and the g ‐values are calculated both for a weak bond and for a two‐fold coordinated defect and are compared with experiments.