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Relation of recombination radiation spectra to the concentration of structure defects in CdS single crystals
Author(s) -
Brodin M. S.,
Davydova N. A.,
Shablii I. Yu.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150235
Subject(s) - recombination , exciton , spectral line , radiation , spontaneous emission , radiative transfer , redistribution (election) , valence (chemistry) , emission spectrum , chemistry , single crystal , valence band , laser , photoluminescence , band gap , molecular physics , atomic physics , materials science , crystallography , condensed matter physics , optics , optoelectronics , physics , biochemistry , organic chemistry , astronomy , politics , political science , law , gene
It is shown that the interaction of the ruby laser radiation with a CdS single crystal leads to the formation of structure defects (largely of donor type) in a thin subsurface layer, essentially influencing the optical properties of the crystal. In particular, at low concentrations of the donors formed the radiative recombination spectra at 4.2 K exhibit a redistribution of the emission intensity in the group of lines of bound excitons whereas at higher concentrations new emission bands, 4875 and 4880 Å, appear. From the data obtained the former line is interpreted in terms of an optical transition involving donor centres and the valence band, and the latter is attributed to band‐to‐band recombination.