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Current density near the semiconductor‐insulator interface
Author(s) -
Paasch G.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150217
Subject(s) - semiconductor , scattering , insulator (electricity) , wave function , current (fluid) , condensed matter physics , generalization , physics , interface (matter) , mathematical analysis , mathematics , optoelectronics , mechanics , optics , quantum mechanics , thermodynamics , bubble , maximum bubble pressure method
A modified local density approximation which takes into account that the wave functions are zero at the semiconductor‐insulator interface is used to investigate the influence of this behaviour of the wave function on the mobility. The result follows from a generalization of the classical transport description. It is shown that the decrease of the mobility due to surface scattering is reduced by the influence of the wave functions. In addition a modification of the expression for the diffusion current connected with the influence of the wave functions is given.