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EPR of iron‐boron centres in silicon
Author(s) -
Gehlhoff W.,
Segsa K. H.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150214
Subject(s) - boron , silicon , electron paramagnetic resonance , ion , doping , materials science , spectral line , isotope , boro , electrical resistivity and conductivity , inorganic chemistry , crystallography , chemistry , nuclear magnetic resonance , metallurgy , physics , optoelectronics , nuclear physics , organic chemistry , quantum mechanics , astronomy
The EPR spectra of one type of iron‐boron centres detected in low‐resistivity B‐doped p‐silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from interstitially incorporated Fe + ions adjacent in 〈111〉 directions to B − ions on substitutional sites.