EPR of iron‐boron centres in silicon | Zendy

Gehlhoff W. | Zendy; Segsa K. H. | Zendy

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EPR of iron‐boron centres in silicon

Author(s) -

Gehlhoff W.,

Segsa K. H.

Publication year - 1983

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221150214

Subject(s) - boron , silicon , electron paramagnetic resonance , ion , doping , materials science , spectral line , isotope , boro , electrical resistivity and conductivity , inorganic chemistry , crystallography , chemistry , nuclear magnetic resonance , metallurgy , physics , optoelectronics , nuclear physics , organic chemistry , quantum mechanics , astronomy

The EPR spectra of one type of iron‐boron centres detected in low‐resistivity B‐doped p‐silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from interstitially incorporated Fe + ions adjacent in 〈111〉 directions to B − ions on substitutional sites.

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