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Modified Thomas‐Fermi approximation for systems with finite surface barriers
Author(s) -
Bartoš I.,
Kolář M.,
Paasch G.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150213
Subject(s) - condensed matter physics , fermi surface , fermi gamma ray space telescope , fermi level , bent molecular geometry , surface (topology) , local density approximation , doping , boundary (topology) , charge density , charge (physics) , physics , semiconductor , electron , quantum mechanics , materials science , electronic structure , geometry , mathematics , mathematical analysis , composite material
Incorporation of a boundary condition into the Thomas‐Fermi approximation is generalized for systems with finite surface barriers. The standard and the modified procedures for the determination of the charge density are tested on the image‐type model potential corresponding to the bent bands at surfaces of semimetals or highly doped semiconductors. Substantial improvement of the description of the electron charge density is achieved in the modified Thomas‐Fermi approximation.