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Intrinsic recombination in dependence on doping concentration and excitation level application to lead chalcogenides
Author(s) -
Mocker M.,
Ziep O.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150211
Subject(s) - recombination , degeneracy (biology) , sublinear function , doping , auger effect , anisotropy , excitation , atomic physics , spontaneous emission , rate equation , condensed matter physics , materials science , chemistry , auger , physics , kinetics , optics , laser , bioinformatics , mathematics , quantum mechanics , gene , biology , biochemistry , mathematical analysis
On the base of anisotropic and parabolic band structure recombination rates are calculated for the mixed crystals Pb 0.78 Sn 0.22 Te and PbS 0.1 Se 0.9 in dependence on non‐equilibrium carrier concentration δ n up to 10 20 cm −3 in a wide range of temperatures and doping levels. Degeneracy causes different changes of lifetimes or recombination rates for material with different activation energies of the recombination process. Both, weakening or strengthening of the known n 2 p ‐law of the Auger transition rate can occur at beginning degeneracy. At δn > 10 19 cm −3 always sublinear behaviour should be observed. For radiative recombination a weakening of the np ‐law is obtained generally; in the limit δn > 10 19 cm −3 the rate behaves like ( δn ) 4/3 .