Premium
Recombination luminescence and energy transfer in ionic crystals at XUV excitation by synchrotron radiation
Author(s) -
Elango M.,
Pruulmann J.,
Zhurakovski A. P.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150209
Subject(s) - luminescence , quantum yield , atomic physics , synchrotron radiation , materials science , ionic bonding , photon , diffusion , halide , photon energy , spectral line , recombination , molecular physics , chemistry , optoelectronics , optics , physics , ion , inorganic chemistry , biochemistry , gene , astronomy , organic chemistry , fluorescence , thermodynamics
Abstract The relative quantum yield spectra of recombination luminescence for MgO, α‐Al 2 O 3 , SiO 3 , and several alkali halide crystals are measured by synchrotron radiation in the photon energy interval 50 to 250 eV. The main feature of the spectra of oxides is a suppression of the volume luminescence due to surface losses of electrons and holes. For alkali halides surface as well as volume recombination luminescence take place. The more intensive the surface luminescence is the larger the absorption coefficient for exciting photons. The quantum yield spectra may be interpreted quantitatively on the basis of the hot carrier diffusion theory, the diffusion lengths being 2200 Å for MgO, 1500 Å for α‐Al 2 O 3 , and 300 Å for SiO 2 .