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Study of energy band parameters in p‐type Ge 0.9 Si 0.1 alloys
Author(s) -
Takeda K.,
Maeda Y.,
Ohta E.,
Sakata M.,
Kido G.,
Miura N.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150206
Subject(s) - cyclotron resonance , cyclotron , semiconductor , effective mass (spring–mass system) , absorption (acoustics) , phonon , condensed matter physics , germanium , atomic physics , resonance (particle physics) , electronic band structure , hall effect , materials science , chemistry , physics , electrical resistivity and conductivity , optoelectronics , plasma , silicon , nuclear physics , quantum mechanics , composite material
The electronic properties of Ge 0.9 Si 0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.