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Some optical and electrical measurements on Cs 3 Bi 2 Br 9 single crystals
Author(s) -
Timmermans C. W. M.,
Cholakh S. O.,
van der Woude R. L.,
Blasse G.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150130
Subject(s) - bismuth , photoconductivity , exciton , conduction band , electron , valence band , materials science , semimetal , quasi fermi level , valence (chemistry) , condensed matter physics , atomic physics , chemistry , physics , band gap , optoelectronics , organic chemistry , quantum mechanics , metallurgy
The optical properties of Cs 3 Bi 2 Br 9 in the spectral range 2 to 10 eV are reported and discussed. The results are interpreted with the aid of the calculated band scheme of CsPbBr 3 . The band edge is situated at 2.707 eV and is ascribed to a transition from the bismuth (6s) valence band to the bismuth (6p) conduction band. The intracationic exciton transition, which takes place at 2.699 eV, is allowed but with a low transition probability. Photoconductivity measurements reveal that the electrons are the more mobile charge carriers.