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Estimation of second‐order Auger recombination in lead chalcogenides
Author(s) -
Ziep O.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150118
Subject(s) - recombination , auger effect , plasmon , electron , atomic physics , spontaneous emission , auger , physics , chemistry , optoelectronics , optics , quantum mechanics , laser , biochemistry , gene
Three‐electron recombination, LO‐phonon‐assisted Auger recombination; and recombination by two‐plasmon emission are qualitatively discussed by means of q ‐ and ω‐dependent inverse dielectric functions in an unitary manner. In case of PbSe‐like semiconductors the effectivity of three‐electron and two‐plasmon recombination is estimated. Whereas two‐plasmon recombination is mostly less effective than Auger recombination it is predicted that three‐electron recombination neglected till now in analysis of recombination dominates at carrier concentrations 10 18 to 10 19 cm −3 as compared to Auger recombination and should be provable experimentally.