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Electron spin resonance of doped glow‐discharge amorphous germanium
Author(s) -
Stutzmann M.,
Stuke J.,
Dersch H.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221150116
Subject(s) - laser linewidth , germanium , doping , electron paramagnetic resonance , dangling bond , hyperfine structure , materials science , atomic physics , condensed matter physics , electrical resistivity and conductivity , chemistry , nuclear magnetic resonance , silicon , physics , laser , quantum mechanics , metallurgy , optics
ESR‐spectra and transport properties of a‐Ge:H, prepared by decomposition of GeH 4 in a glow‐discharge, are investigated for different phosphorus and boron doping. Undoped and moderately doped samples show the usual resonance at g = 2.0225 due to dangling bonds. For high doping levels, however, two new lines are found: high boron doping leads to a resonance at g = 2.0535 with a linewidth of 112 G, high phosphorus doping to a line at g = 2.0120 with Δ H pp = 33 G. These lines are attributed to localized holes and electrons in the tails of valence and conduction band, respectively. The linewidth of all resonances is the combination of a g ‐spectrum Δ H pp ( g ) and a considerably smaller residual linewidth Δ H pp ( r ) caused by unresolved hyperfine interaction. A simple relation between the g ‐shift g–g 0 and Δ H pp ( g ) is found which explains the similar doping dependence of g ‐value and linewidth. From the dependence of the spin density N s on the conductivity activation energy E σ a model for the density of states in the mobility gap is deduced. A comparison between the ESR‐data of a‐Ge: H and a‐Si: H shows that g ‐shifts and linewidths of the three resonances are for a‐Ge: H by a factor of about six larger than for the corresponding lines of a‐Si: H.