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Conductivity of semiconductors influenced by strong electromagnetic radiation
Author(s) -
Fomin V. M.,
Pokatilov E. P.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221140239
Subject(s) - physics , semiconductor , electromagnetic field , condensed matter physics , isotropy , conductivity , electron , electromagnetic radiation , anisotropy , degenerate energy levels , field (mathematics) , electrical resistivity and conductivity , scattering , computational physics , optics , quantum mechanics , mathematics , pure mathematics
A method of solving the equation of motion for the density matrix of a non‐degenerate electronic ensemble in semiconductors in a strong electromagnetic radiation field is developed on the basis of a self‐consistent determination of the coefficients in an approximated Fokker‐Planck equation. The influence of a strong electromagnetic radiation field on the conductivity of semiconductors in a constant electric field is considered. At high temperatures the non‐linear conductivity is shown to be isotropic and caused mainly by heating while at low temperatures the nonlinear conductivity is essentially anisotropic and contains contributions due to both the influence of a strong electromagnetic radiation field on the scattering probability and to the heating of electrons. The relative value of the contributions due to the mentioned non‐linearity sources is analysed at intermediate temperatures.