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Variable reconstruction of dislocation cores in Si
Author(s) -
Mergel D.,
Labusch R.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221140230
Subject(s) - dislocation , photoconductivity , condensed matter physics , materials science , core (optical fiber) , doping , peierls stress , dislocation creep , crystallography , chemistry , physics , optoelectronics , composite material
Photoconductivity spectra and Hall‐effect measurements of deformed Si samples with different doping concentrations and dislocation densities suggest a dependence of the dislocation energy levels on their occupation. This is in contrast to the widely used rigid‐band‐model. A Peierls‐like structural transition in the core of a 90°‐partial is discussed as the most likely explanation of this effect.