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Experiment investigation on the complex dielectric function of CdS in the exciton and in the plasma limit
Author(s) -
Kreissl A.,
Bohnert K.,
Lyssenko V. G.,
Klingshirn C.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221140229
Subject(s) - exciton , dielectric function , excited state , plasma , excitation , dielectric , condensed matter physics , semiconductor , phase transition , phase (matter) , limit (mathematics) , enhanced data rates for gsm evolution , materials science , atomic physics , physics , quantum mechanics , optoelectronics , mathematics , telecommunications , mathematical analysis , computer science
The real and imaginary parts of the complex dielectric function of CdS are experimentally investigated for low temperatures and for various excitation conditions. Strong changes of the dielectric function are observed at high excitation in the spectral region below the band edge. Emphasis is put on the variations of the real part at the transition from a low density exciton phase to a high density plasma phase. It is shown, that the Kramers‐Kronig relations are also valid for highly excited semiconductors. The experimental results are compared with recent theoretical predictions.