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Local partial al DOS in FeAl and AlAl
Author(s) -
Müller Ch.,
Ziesche P.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221140227
Subject(s) - antiresonance , feal , condensed matter physics , valence (chemistry) , lattice (music) , tin , physics , materials science , atomic physics , metallurgy , quantum mechanics , intermetallic , resonance (particle physics) , alloy , acoustics
The energy eigenvalue results obtained by a linear KKR method for B2 FeAl and an hypothetical B2 AlAl of the same lattice spacing are used to calculate the local partial DOS (densities of states) as well as the corresponding valence‐electron numbers per muffin‐tin sphere (MTS) of these two systems. The comparison of the two different local partial Al DOS indicates that the Al states in the FeAl compound are strongly affected by the antiresonance effect caused by the presence of the resonant Fe scatterer in the neighbourhood. The charge transfer is also discussed in connection with the antiresonance effect.