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Low temperature conductivity and optical transitions of a two‐dimensional disordered semiconductor under weak localization conditions
Author(s) -
BonchBruevich V. L.,
Nguyet To Thi Bich
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221140108
Subject(s) - condensed matter physics , semiconductor , conductivity , weak localization , optical conductivity , density of states , electron localization function , fermi level , physics , electron , materials science , quantum mechanics , magnetoresistance , magnetic field
Two problems are considered of the theory of two‐dimensional disordered semiconductors. The first one is that of a temperature dependence of the static conductivity when the Fermi level lies in the weak localization region. The second one concerns the frequency dependence of the light absorption coefficient due to electron transitions between the strongly (exponentially) and weakly localized states. It is shown that the latter experiments might reveal the form of the density of states in a weakly localization region.