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Absolute Hydrostatic Deformation Potentials of Tetrahedral Semiconductors
Author(s) -
Vergés J. A.,
Glötzel D.,
Cardona M.,
Andersen O. K.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221130217
Subject(s) - pseudopotential , germanium , silicon , semiconductor , hydrostatic equilibrium , hydrostatic pressure , deformation (meteorology) , condensed matter physics , tetrahedron , valence (chemistry) , doping , lattice constant , lattice (music) , chemistry , materials science , atomic physics , physics , crystallography , thermodynamics , optics , quantum mechanics , optoelectronics , organic chemistry , diffraction , acoustics , composite material
The “absolute” hydrostatic deformation potentials of several band states of germanium and silicon are calculated with the LMTO‐ASA method. It is found that for the top valence band state d E / d In V ≈ −8 eV. The results are compared with experimental data available. They agree with calculations based on empirical pseudopotentials provided one assumes d V 0 /d In V ≈ 0, where V 0 is the spatially averaged pseudopotential. In order to obtain agreement with empirical tight binding results one must introduce a volume dependence of the term energies. Using the calculated deformation potentials, the dependence of the lattice constant on doping measured for n‐ and p‐type germanium, silicon, and GaAs is discussed.