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On the Theory of Conductivity of Disordered Semiconductors
Author(s) -
BonchBruevich V. L.,
Nguyet To Thi Bich
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221130209
Subject(s) - conductivity , delocalized electron , condensed matter physics , semiconductor , materials science , metal , physics , quantum mechanics , optoelectronics , metallurgy
The temperature dependences of the conductivity and mobility of delocalized carriers is calculated in terms of the critical indices describing the behaviour of the energy‐dependent conductivity. Results suggest a possibility to obtain both the indices and the minimum metallic conductivity (if any) from mobility measurements.