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Faraday Effect in III— VI Layer Compounds
Author(s) -
Gavaleshko N. P.,
Lyakhovich A. N.,
Vatamanyuk P. P.,
Savchuk A. I.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221130206
Subject(s) - faraday effect , semiconductor , exciton , condensed matter physics , faraday cage , magnetic field , layer (electronics) , absorption (acoustics) , chemistry , materials science , optics , physics , optoelectronics , nanotechnology , quantum mechanics
The Faraday effect is investigated in fields up to 20 T and at temperatures from 77 to 300 K applied to the layer semiconductors GaS, GaSe, and InSe. As an example applicable to the InSe crystals, it is shown possible to separate the direct and indirect forbidden transitions both contributing to the Faraday rotation (FR). The oscillatory nature of the FR spectrum at lower temperatures is proved to be due to the exciton contribution. This is the original report about the FR observed in the depth of the fundamental absorption of InSe crystals. The linearity of the FR in the magnetic field is shown to hold for all the compounds under consideration up to 20 T. The observed data are analyzed in order to estimate some band and exciton parameters of the III—VI semiconductors.