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Calculation Model for Valence Electrons and Hydrogen Concentration in a‐Si:H
Author(s) -
Ance C.,
Ferraton J. P.,
Berger J. M.,
de Chelle F.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221130110
Subject(s) - valency , valence electron , valence (chemistry) , silane , hydrogen , electron , amorphous silicon , ion , silicon , dielectric , materials science , glow discharge , analytical chemistry (journal) , atomic physics , dispersion (optics) , chemistry , crystalline silicon , plasma , physics , optics , organic chemistry , optoelectronics , philosophy , linguistics , quantum mechanics , composite material
Abstract A simple model is developped to relate the valence electron number to the dispersion energy E d and the static dielectric constant ϵ(0). This model is applied to hydrogenated amorphous silicon films prepared by glow discharge decomposition of silane. It is shown that the variation of valence electron number and anion valency explain the variation of the dispersion energy. This model allows to determine the hydrogen concentration in a‐Si:H films from two spectroscopic parameters E d and ϵ(0).