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EPR Investigation of Manganese–Boron Pairs in Silicon
Author(s) -
Kreissl J.,
Gehlhoff W.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120241
Subject(s) - manganese , boron , hyperfine structure , zeeman effect , silicon , electron paramagnetic resonance , ion , doping , crystallography , materials science , chemistry , condensed matter physics , nuclear magnetic resonance , atomic physics , magnetic field , physics , optoelectronics , organic chemistry , quantum mechanics , metallurgy
After manganese doping of low‐resistivity B‐doped p‐silicon an EPR centre is detected, which could be identified in accordance with Ludwig and Woodbury as a manganese‐boron pair, where a interstitially incorporated Mn 2+ ion is located in the immediate vicinity of a B − ion on a substitutional site. It is shown, that compared to the main direction H ∥ C 3 and H τ C 3 the much more complex spectra observed for arbitrary directions of the magnetic field are caused by the simultaneous appearance of “allowed” and “forbidden” hyperfine transitions owing to the comparable magnitudes of the Zeeman splitting and fine structure splitting in the X‐band. Additionally a weak dependence of the magnitude of the local trigonal crystal‐field distortion at the manganese site on the associated boron isotope 10 B/ 11 B is proved (isotope effect in the fine structure).