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Hot‐Carrier Galvanomagnetic Effects in High Magnetic Fields
Author(s) -
Khan F. A.,
Bhattacharya D. P.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120236
Subject(s) - charge carrier , condensed matter physics , boltzmann equation , free carrier , trapping , scattering , magnetic field , phonon , physics , momentum (technical analysis) , semiconductor , carrier scattering , materials science , thermodynamics , quantum mechanics , ecology , finance , economics , biology
Abstract By using the Boltzmann transport equation the low‐temperature galvanomagnetic effects due to non‐equilibrium charge carriers in a covalent semiconductor are investigated in the presence of a high (non‐quantizing) magnetic field. The energy and momentum of the free carriers are assumed to be scattered, respectively, by deformation acoustic phonons and static imperfections in order to obtain the energy distributions among them at low temperatures. The galvanomagnetic coefficients are calculated for the weakly and also for the strongly heated charge carrier systems. The results may be used to yield information of the characteristics of different trapping centres and also to determine the dominant scattering mechanism of the free carriers.