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On the Electric Subbands in n‐Inversion Layers on (111) Ge
Author(s) -
Germanova K.,
Marinova K.,
Trayanov A.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120227
Subject(s) - inversion (geology) , semiconductor , non equilibrium thermodynamics , condensed matter physics , biasing , voltage , materials science , point reflection , physics , optoelectronics , geology , quantum mechanics , paleontology , structural basin
Self‐consistent results on the subband energy structure of n‐inversion layers on (111) Ge in the effective‐mass approximation at T = 4.2 and 77 K are presented. The nonequilibrium case with a bias voltage, applied between the inversion layer and semiconductor bulk, is described.