Premium
On the Electric Subbands in n‐Inversion Layers on (111) Ge
Author(s) -
Germanova K.,
Marinova K.,
Trayanov A.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120227
Subject(s) - inversion (geology) , semiconductor , non equilibrium thermodynamics , condensed matter physics , biasing , voltage , materials science , point reflection , physics , optoelectronics , geology , quantum mechanics , paleontology , structural basin
Self‐consistent results on the subband energy structure of n‐inversion layers on (111) Ge in the effective‐mass approximation at T = 4.2 and 77 K are presented. The nonequilibrium case with a bias voltage, applied between the inversion layer and semiconductor bulk, is described.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom