Study of Rearrangements of Intrinsic Defects at Annealing of Proton‐Irradiated Silicon

Rearrangement processes proceeding during annealing of electrically active radiation defects in heavily irradiated (30 MeV protons) Si when the concentration of primary defects induced exceeds the concentration of impurities available in crystal are studied. Czochralski grown and vacuum floating‐zone n‐ and p‐type silicon (ϱ = 3 to 500 Ω cm) are used. Experimental results obtained from the analysis of the Hall coefficient temperature dependences show that the rearrangement of intrinsic structural defects (diinterstitials and multivacancy complexes) occurs predominantly during annealing. Accumulation kinetics is studied and temperature stability range of some multivacancy complexes contributing to the forbidden gap energy levels E v + 0.29 eV (400 to 650 °C), E v + 0.32 eV (500 to 750 °C), E v + 0.22 eV (500 to 700 °C), E v + 0.15 eV (500 to 800 °C), E v + + 0.10 eV (600 to 750 °C), E c −0.24 eV (500 to 850 °C) most of which are acceptor levels is determined. The diinterstitial (Si‐B3) center being annealed in the temperature range 300 to 500 °C is supposed to be a multicharge defect and has deep acceptor ( E c −0.40 eV) and donor ( E v + 0.35 eV) levels.