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Electronic Properties of the Molten Tl‐AgTlS 2 System
Author(s) -
Nakajima T.,
Uemura O.,
Satow T.,
Yagihashi T.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120136
Subject(s) - telluride , seebeck coefficient , electrical resistivity and conductivity , thermoelectric effect , sulfide , melting point , conductivity , materials science , condensed matter physics , composition (language) , semiconductor , lead telluride , thermodynamics , atmospheric temperature range , analytical chemistry (journal) , metallurgy , chemistry , physics , optoelectronics , composite material , linguistics , philosophy , chromatography , quantum mechanics
The electrical conductivity, the magnetic susceptibility, and the thermoelectric power of liquid Tl x (AgTlS 2 ) 1‐ x alloys are measured as a function of composition in the temperature range from the melting point to 900 °C. The behaviour of these electronic properties is qualitatively the same as the previous result of liquid Tl x (AgTlTe 2 ) 1‐ x alloys except for the differences mentioned below. A main difference is that the value of conductivity minimum at x ≈ 2/3 for the sulfide system is considerably smaller than that for the telluride system. Corresponding to the conductivity result, the thermoelectric power becomes as large as 250 μ V/K around this composition. Secondly, for x ≈ 2/3, the conductivity is almost independent of composition in the sulfide alloys, whereas the conductivity of the telluride alloys depends strongly on composition. Furthermore, the anomalous change of electronic properties around x ≈ 2/3 becomes less rapid in sulfide alloys compared with the case of telluride alloys. Discussions on the electron localization for liquid Tl x (AgTlS 2 ) 1‐ x are made in terms of current electron transport theories for liquid semiconductors using the present data.