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Conduction Processes in High Acceptor Concentration HgTe
Author(s) -
Lombos B. A.,
Averous M.,
Fau C.,
Calas J.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120127
Subject(s) - acceptor , impurity , thermal conduction , scattering , condensed matter physics , semiconductor , chemistry , conduction band , anderson impurity model , materials science , atomic physics , physics , thermodynamics , optics , quantum mechanics , optoelectronics , organic chemistry , electron
The effects of vacancy induced acceptors in zero gap semiconductors, like in HgTe, are treated by the resonant state theory. First, one scattering center is considered, then multiple scattering is developed in the case of acceptor concentrations up to 1 × 10 22 m −3 . In this investigation the effects of even higher acceptor concentrations ( N ≥ 1 × 10 23 m −3 ) are elucidated. It is shown that in this case the resonant state model is no longer applicable since the randomly distributed impurities result in a fluctuating potential field. Thus the impurity disorder introduces an Anderson type conduction process. This is characterized by a large change in the mobility when the Fermi level goes through the acceptor band. These mobilities, related to the Anderson type conduction mechanisms, are in good agreement with the experimentally determined ones in the case of HgTe. While using the resonant state theory, the predicted mobilities are not in satisfactory agreement with the measured ones in the high acceptor concentration range analyzed in this investigation.