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Chemical Shifts of Auger Lines in Solids on the Example of the KL 23 L 23 Transition in Silicon and Its Compounds
Author(s) -
Fellenberg R.,
Streubel P.,
Meisel A.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221120104
Subject(s) - silicon , electronegativity , auger , silicon carbide , silicon nitride , atomic physics , silicon dioxide , relaxation (psychology) , materials science , chemistry , analytical chemistry (journal) , optoelectronics , physics , metallurgy , organic chemistry , chromatography , psychology , social psychology
The line position of the Si KL 23 L 23 Auger transition is measured in silicon, silicon carbide, silicon nitride, silicon dioxide, and sodium hexafluorosilicate. The chemical shifts with reference to silicon are estimated and compared with the corresponding shifts of photoelectron peaks of Si 1s and Si 2p. The change of the extra‐atomic static relaxation energy Δ R s ea determined in this way is proportional in first approximation to Pauling's electronegativity. The described method makes possible to estimate parameters of bonding in atomic ranges in solids containing silicon.