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Transport Properties and Plasma Resonance of Bismuth Selenide Crystals Doped with Cadmium
Author(s) -
Horäk J.,
Koudelka L.,
Klikorka J.,
Šiška L.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221110220
Subject(s) - cadmium selenide , bismuth , acceptor , doping , impurity , seebeck coefficient , atom (system on chip) , lattice constant , materials science , cadmium , crystallographic defect , resonance (particle physics) , crystal (programming language) , chemistry , condensed matter physics , crystallography , atomic physics , thermal conductivity , nanotechnology , optics , programming language , optoelectronics , composite material , metallurgy , embedded system , physics , organic chemistry , computer science , quantum dot , diffraction
Electrical conductivity, Seebeck coefficient, Hall constant, and plasma resonance frequency are determined for samples of Bi 2 Se 3 crystals, pure and doped with Cd. The concentration of the free carriers is determined from the measured transport parameters and compared with the concentration of cadmium atoms as determined by atomic absorption technique. It is found that each Cd atom built into the crystal lattice removes approximately one conduction electron. On the basis of this finding and using the ideas about the bonding conditions in the lattice, the nature of the point defects brought about by introducing Cd atoms into the Bi 2 Se 3 crystals is describecd. The Cd atoms occupy the sites of Bi atoms, which results in Cd′ Bi defects of acceptor nature. Finally, a comparison of the properties of the impurities from the group 2b of the periodic system is made.