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Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon
Author(s) -
Morante J. R.,
Carceller J. E.,
Cartujo P.,
Barbolla J. J.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221110143
Subject(s) - silicon , acceptor , semiconductor , phonon , matrix (chemical analysis) , coupling (piping) , materials science , thermal , radiative transfer , atomic physics , physics , condensed matter physics , thermodynamics , quantum mechanics , optoelectronics , metallurgy , composite material
On the basis of the quantum‐defect wave function and assuming a linear coupling, a calculus of the Huang‐Rhys factor S and the other matrix elements is made using the theory of non‐radiative multiphonon assisted carrier capture processes at deep levels in semiconductors. A fitting of the temperature dependence of the capture cross‐section of the gold acceptor level in silicon is made also, while pointing out as well the existence of high sensitivity in the absolute values of the capture rate to the S parameter. The number of phonons used is p = 8, whereas the values of the associated Huang‐Rhys factor varies accordingly to the sample.