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Collective Phenomena in Edge Emission of ZnTe and ZnSe Crystals
Author(s) -
Baltramieyunas R.,
Kuokshtis E.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221110120
Subject(s) - exciton , luminescence , excited state , radiative transfer , spontaneous emission , crystal (programming language) , photoluminescence , absorption edge , emission spectrum , spectral line , materials science , impurity , atomic physics , molecular physics , chemistry , condensed matter physics , optics , optoelectronics , physics , band gap , laser , organic chemistry , astronomy , computer science , programming language
The radiative recombination of highly excited ZnTe and ZnSe single crystals in their self‐absorption region is studied. The new L‐ and P‐bands are observed in the emission spectra of the crystals under investigation. It is established on the basis of experimental and theoretical analysis of the spontaneous luminescence and optical gain spectra shapes, their dependence upon the excitation intensity and temperature, as well as shallow impurities, that radiative transitions in electronhole drops (EHD) predominate in luminescence at low temperature (4.2 K) in the most pure ZnTe and ZnSe crystals and are responsible for the L‐band. The P‐band caused by radiative processes in dense partly ionized exciton gas appears in the luminescence spectra in the defective crystals or at high temperature. The question is discussed of the competition of the radiative recombination in EHD and in exciton gas, as well as in homogeneous electron‐hole plasma forming near the surface of the crystal or under the thermal splitting of excitons.