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Optically Induced Potential Fluctuations in a‐Si:H Films
Author(s) -
Hauschildt D.,
Fuhs W.,
Mell H.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221110118
Subject(s) - seebeck coefficient , activation energy , conductivity , materials science , thermoelectric effect , electrical resistivity and conductivity , enhanced data rates for gsm evolution , condensed matter physics , current (fluid) , atomic physics , glow discharge , chemistry , analytical chemistry (journal) , physics , plasma , thermodynamics , quantum mechanics , telecommunications , chromatography , computer science
The influence is studied of prolonged optical exposure on the properties of the current path in glow discharge deposited a‐Si:H films. Information on these properties is obtained from concomitant investigations of the conductivity σ and thermoelectric power S as a function of temperature. It is found that the activation energies of both quantities, E σ and E S , increase appreciably upon light exposure. At the same time the difference E σ — E S = E Q rises from ≈ 0.09 to 0.21 eV. The quantity E Q , which is an apparent mobility activation energy, is associated with spatial fluctuations of the mobility edge. The increase of E Q is attributed to the enhancement of potential fluctuations which is caused by inhomogeneously distributed charged centers generated during optical exposure.