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Optical Absorption in PbSe 1‐‐ x Te x Due to Transitions between Band States and Localized Energy Levels
Author(s) -
Finkenrath H.,
Franz G.,
Uhle N.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221110113
Subject(s) - valence band , absorption (acoustics) , valence (chemistry) , band gap , materials science , range (aeronautics) , absorption edge , absorption spectroscopy , electronic band structure , condensed matter physics , atomic physics , chemistry , optics , optoelectronics , physics , organic chemistry , composite material
The optical absorption of thin PbSe 1‐ x Te x films prepared by hot‐wall epitaxy in the frequency range 80 to 660 cm −1 . The maximum of a broad absorption band changes its spectral position in a characteristic manner when the composition parameter x is varied. Some possible absorption mechanisms are discussed. The experimental results are mostly understandable by the assumption of electronic transitions between valence band states and localized energy levels within the valence band.