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On the Anomalies in the Temperature Dependence of Conductivity in Hg 1− x Cd x Te
Author(s) -
Arapov Yu. G.,
Davydov A. B.,
Tsidilkovskii I. M.,
Shelushini. G.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221100231
Subject(s) - condensed matter physics , conductivity , electron , acceptor , atmospheric temperature range , hall effect , chemistry , scattering , electrical resistivity and conductivity , valence (chemistry) , conduction band , physics , quantum mechanics , meteorology , optics , organic chemistry
The temperature (1.8 K ≦ T ≦ 77 K) and magnetic field (0 ≦ H ≦ 22 kOe) dependence of the conductivity σ, longitudinal magnetoconductivity σ zz , and of the Hall coefficient R for gapless Hg 1− x Cd x Te crystals are measured. At temperatures T min = 6 to 11 K there occur deep minima of conductivity σ (T) . It is shown that the origin of these minima cannot be accounted for by the resonance scattering of electrons by acceptors. The minima in σ( T ) arise from the decrease in electron mobility caused by the increase of the number of charged centres with increasing temperature when T < T min and by the increase of the concentration of electron‐hole pairs when T > > T min . The anomalies in the conductivity (plateau) and the Hall effect (double inversion of sign) observed in the temperature range 20 K < T < 40 K are due to the contribution of three types of carriers, viz. light conduction band electrons, heavy acceptor band electrons, and valence band holes.