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Strong‐Field Hopping in Disordered Semiconductors A Problem of Directed Percolation
Author(s) -
van der Meer M.,
Schuchardt R.,
Keiper R.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221100226
Subject(s) - condensed matter physics , electric field , percolation (cognitive psychology) , ohmic contact , semiconductor , vertex (graph theory) , percolation threshold , physics , materials science , statistical physics , mathematics , electrical resistivity and conductivity , quantum mechanics , psychology , graph , electrode , discrete mathematics , neuroscience
Starting from a density matrix formulation the hopping current induced by phonons and a strong electric field in disordered semiconductors is discussed in dependence on the temperature and the electric field strength. The treatment of the corresponding rate equation makes use of the directed percolation method. Essential informations about the non‐ohmic behaviour can be obtained from the analysis of the vertex star.