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The Temperature Dependence of the Spin Resonance in Boron Doped a‐Si:H
Author(s) -
Overhof H.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221100219
Subject(s) - laser linewidth , spins , condensed matter physics , doping , relaxation (psychology) , chemistry , spin (aerodynamics) , activation energy , boron , line (geometry) , resonance (particle physics) , atomic physics , physics , thermodynamics , psychology , social psychology , laser , organic chemistry , optics , geometry , mathematics
The temperature dependence of the g = 2.01 ESR line in boron doped a‐Si has recently been studied by the Marburg group. For this line the g ‐value, linewidth, and lineshape factor depend both on temperature and doping level. The temperature shift of the g ‐value is explained by a model in which the g ‐factor depends explicitely on energy and the temperature dependence is a result of the temperature shift of the mean energy of the spins. This model is combined with a density of states distribution recently reported to interpret the de transport data. From this the energy dependence of the g ‐factor is obtained and the linewidth Δ H pp 0due to g ‐value broadening as a function of temperature and doping level is calculated. At elevated temperatures an additional contribution to the linewidth, δH pp ( T ), is observed and is interpreted by the Marburg group as due to spin relaxation via exchange interaction between the localized spins and rapidly relaxing carriers in extended states. It is shown that long‐ranged potential fluctuations combined with this relaxation mechanism can easily explain both the relation between the dc conductivity σ and δ H pp ( T ) and the rapid rise of the lineshape factor l as δ H pp ( T ) begins to dominate the total linewidth.