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Influence of Semiconductor Dielectric Function Spatial Dispersion on Charge Electrostatic Energy near the Semiconductor/Vacuum Interface and Field Emission Current
Author(s) -
Gabovich A. M.,
Voitenko A. I.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221100204
Subject(s) - semiconductor , condensed matter physics , dielectric , electric field , field (mathematics) , dispersion (optics) , doping , atomic physics , materials science , physics , optoelectronics , optics , quantum mechanics , mathematics , pure mathematics
The electrostatic charge energy W near the semiconductor/vacuum interface is calculated for a variety of models describing the semiconductor static dielectric function ε( k ) dependent on a momentum transferred k . It is shown that the correct account of this dependence leads to the finiteness of the energy W and the image force electrostatic field – σW/σz , when z → O, where z is the distance from the interface. The potential barrier shape for the field emission from semiconductors is found and the dependences of the tunnel current density j on the applied field F , the temperature T and the doping impurity concentration n 0 are calculated. It is shown that the spatial dispersion effects of ε( k ) essentially affect the magnitude of j , but do not change the dependence j ( F ) which follows from the Fowler‐Nordheim classical formula.