Premium
Local Density Approximation Applied to Bound Excitons in Polar Semiconductors
Author(s) -
Haufe A.,
Henneberger K.,
Röseler J.,
Wünsche H.J.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221100117
Subject(s) - polaron , exciton , polar , physics , phonon , semiconductor , homogeneous , electron , condensed matter physics , binding energy , particle (ecology) , atomic physics , quantum mechanics , statistical physics , geology , oceanography
Binding energies of excitons at donors in polar semiconductors are calculated in the frame of the Fröhlich model for the interaction of the particles with LO phonons. Beside the exchange‐correlation parts of the direct particle‐particle interactions, the dynamical effects of the particle‐phonon interactions are also treated within the LDA. For this purpose, a single parametrized formula for the dependence of the corresponding energies of a homogeneous e‐h plasma on the particle densities is used. The numerical results for both, the bound polaron D° and the bound exciton D°X agree with the best available theoretical data as well as with experimental values. From these facts it is concluded that LDA is an appropriate method for treating not only electron–electron interactions but also the electron–phonon interaction in inhomogeneous e‐h systems.