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Electrical Properties of InSb Irradiated with Fast Neutrons
Author(s) -
Baramidze N. V.,
BonchBruevich V. L.,
Giorgadze M. P.,
Kurdiani N. I.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221100103
Subject(s) - irradiation , scattering , materials science , charge carrier , condensed matter physics , hall effect , range (aeronautics) , field (mathematics) , atmospheric temperature range , neutron , charge (physics) , electron mobility , electrical resistivity and conductivity , physics , optics , nuclear physics , thermodynamics , composite material , mathematics , quantum mechanics , pure mathematics
Variations are studied of the electrical properties of n‐ and p‐InSb induced by fast neutron irradiation (fluences from 1 × 10 17 to 8 × 10 19 n/m 2 ). Temperature dependences of the concentration and mobility of the charge carriers is studied by the Hall effect method in the temperature range from 77 to 300 K — both before and after irradiation. Parameters of a random field produced by disordered regions are calculated. Charge carrier scattering by a smooth random field created by disordered regions seems to be the dominant scattering mechanism after irradiation.