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On the Phonon Contribution to the Electrical Resistivity of Intermediate Valence Systems
Author(s) -
Christoph V.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090232
Subject(s) - electrical resistivity and conductivity , condensed matter physics , electron , phonon , valence (chemistry) , valence band , tight binding , materials science , atomic physics , physics , electronic structure , band gap , quantum mechanics
The electrical resistivity of an electron–phonon system with two hybridized tight‐binding electron bands is calculated. The electron–electron interaction is taken into account in the Hartree‐Fock approximation leading to an occupation dependent narrowing of the bands. The influence of the effective band width on the resistivity is discussed.