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Effect of Heavy Doping on the Electronic Heat Capacity in Semiconductors
Author(s) -
Chakravarti A. N.,
Ghatak K. P.,
Ghosh S.,
Chowdhury A. K.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090229
Subject(s) - doping , semiconductor , gaussian , condensed matter physics , fermi level , heat capacity , electron , fermi energy , function (biology) , materials science , physics , thermodynamics , optoelectronics , quantum mechanics , evolutionary biology , biology
Abstract An attempt is made to derive an expression for the electronic heat capacity in heavily‐doped semiconductors having Gaussian band‐tails. With the help of this expression, the electronic heat capacity is studied as a function of the electron concentration corresponding to different temperatures, taking heavily‐doped n‐GaAs having Gaussian band‐tails as an example. It is concluded that the nature of the dependence is determined exclusively by the movement of the Fermi level with changing electron concentration through the allowed energy states.