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Thermal Noise, Diffusion, and the Mobility of Hot Holes in Silicon
Author(s) -
Bosman G.,
Zijlstra R. J. J.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090227
Subject(s) - silicon , diffusion , electric field , materials science , thermal conduction , planar , condensed matter physics , noise (video) , diffusion current , electron mobility , physics , current (fluid) , optoelectronics , thermodynamics , composite material , computer graphics (images) , image (mathematics) , quantum mechanics , artificial intelligence , computer science
The longitudinal diffusion coefficient and the mobility of holes in silicon are calculated as a function of electric field strength from noise and conduction measurements on p + πp + planar silicon devices at T = 100, 145, and 210 K. The electric field is oriented along the 〈100〉 direction. The results obtained for the longitudinal diffusion coefficient at T = 100 and 145 K show that both light and heavy holes contribute to charge transport. The values found for the mobility agree very well with those which Ottaviani et al. obtained using the time‐of‐flight technique.