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Exciton Spectra of Orthorhombic Indium Bromide
Author(s) -
Yoshida M.,
Ohno N.,
Nakamura K.,
Nakai Y.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090208
Subject(s) - exciton , absorption edge , orthorhombic crystal system , spectral line , absorption (acoustics) , absorption spectroscopy , atomic physics , phonon , indium , reflection (computer programming) , binding energy , crystal (programming language) , band gap , materials science , chemistry , molecular physics , optics , condensed matter physics , crystal structure , physics , optoelectronics , crystallography , programming language , astronomy , computer science , composite material
Absorption and reflection spectra of InBr single crystal are measured at 2 K with polarized light. Dichroic exciton peaks are observed in the reflection spectrum around 2.33 eV. Binding energy of the direct excition for E ‖ c is estimated as (12 ± 1) meV. Indirect absorption edge is confirmed for E ‖ c by using a wavelength modulation technique. The indirect exciton gap is determined to be 2.129 eV. Absorption components associated with five different phonon energies are resolved, one of which is presumably due to a two‐phonon process. The binding energy of the indirect exciton is estimated to be (6.9 ± 0.4) meV. The indirect gap increases rapidly with increasing temperature.