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Photoemission Study of Oxygen Adsorbed on Sputtered a‐Si(H) and a‐Si
Author(s) -
Cháb V.,
Zemek J.,
Koc S.,
Mikušík P.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090207
Subject(s) - x ray photoelectron spectroscopy , oxygen , photoemission spectroscopy , silicon , adsorption , hydrogen , analytical chemistry (journal) , oxide , valence (chemistry) , ultraviolet , chemistry , silicon oxide , ion , spectroscopy , materials science , silicon nitride , optoelectronics , chemical engineering , physics , organic chemistry , chromatography , quantum mechanics , engineering
The electronic structure of natural oxide layers and of oxygen adsorbed on the surface of sputtered a‐Si and a‐Si(H) thin films are investigated by combining ultraviolet photoemission spectroscopy and X‐ray photoemission spectroscopy. The emission structure in the valence band region which is derived from the oxygen and silicon orbitals, is found to represent the nondissociative adsorption of oxygen on a‐Si(H) surface independently of hydrogen content. XPS study of Si2s and Si2p core levels shows a minimally 0.3 eV smaller value of the chemical shift in the case of naturally oxidized a‐Si(H) and a‐Si films than the value measured on c‐Si oxidized under the same conditions. The ion‐beam effect on oxide layers is briefly discussed.