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Modified Self‐Scattering Procedure for Monte‐Carlo Simulation of Hot Electrons
Author(s) -
Kozlov V. A.,
Nefedov I. M.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090143
Subject(s) - scattering , monte carlo method , physics , electron , trajectory , statistical physics , momentum (technical analysis) , computational physics , electron scattering , mathematics , quantum mechanics , statistics , finance , economics
The generalization of the self‐scattering procedure of the electron trajectory simulation in semiconductors for the arbitrary scattering rates w ( p, p ′) from the state with momentum p to p ′ is suggested. In the method proposed instead of the total scattering rate per unit time v ( p ) = f w ( p, p ′) d 3 p′ the random function ξ( p ) with the average value 〈ξ( p )〉 = v ( p ) is introduced. Such simulation procedure corresponds to the calculation of v ( p ) along the simulated trajectory by means of the Monte‐Carlo method. The comparison of the commonly employed self‐scattering procedure with the suggested one is performed.