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Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si
Author(s) -
Metzdorf J.,
Kessler F. R.
Publication year - 1982
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221090131
Subject(s) - faraday effect , condensed matter physics , sign (mathematics) , faraday cage , physics , semiconductor , rotation (mathematics) , tensor (intrinsic definition) , dielectric , quantum mechanics , magnetic field , mathematics , geometry , mathematical analysis
The Kramers‐Kronig transform of the purely absorptive real part Re of the nondiagonal component of the complex dielectric tensor is applied for the first time to assign quantitatively the contributions from various individual interband transitions (≦ 4.6 eV) to the dispersive interband Faraday rotation (IFR) in Si and Ge. The data of Re needed are determined from measurements of Faraday ellipticity and complex Kerr effect, respectively. In particular, the following problems could be clarified: (i) the origin of the nonresonant change in sign of the rotation in Ge which is due to the competition mainly between negative contributions from E 0 , E 1 + Δ′ 0 transitions and a positive contribution from E 1 transitions; (ii) the relative contributions from indirect transitions in Si. (iii) The present results are generally useful for studying and interpreting the effect of doping and, moreover, give indication of a systematic trend in how various critical points may contribute to the nonresonant IFR in different semiconductors.