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Semiempirical Pseudopotential Calculations for the Electronic Structure of Zincblende Semiconductors
Author(s) -
Singh I.,
Srivastava G. P.
Publication year - 1981
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221080222
Subject(s) - pseudopotential , dielectric function , semiconductor , electronic structure , condensed matter physics , electronic band structure , ionic bonding , dielectric , materials science , physics , quantum mechanics , ion , optoelectronics
A semi‐empirical pseudopotential calculation is made for the electronic structure of zincblende semiconductors InP, GaAs, and CdTe. Using the local approximation, it is started with an ionic model potential, and screening it through the Heine‐Abarenkov dielectric function the pseudo‐potential is obtained. Various parameters in this pseudopotential are chosen so as to obtain good fit for important interband transition energies with experimental results. Band structures and electronic densities of states are presented and compared with earlier local ‐ and nonlocal‐pseudopotential calculations as well as with the available experimental results.