Self‐Trapped Exciton Luminescence after Tunnelling of V k  and Na o  Centers in CsI:Na Crystals | Zendy

Imanaka K. | Zendy; Kayal A. H. | Zendy; Mezger A. C. | Zendy; Rossel J. | Zendy

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Self‐Trapped Exciton Luminescence after Tunnelling of V k and Na o Centers in CsI:Na Crystals

Author(s) -

Imanaka K.,

Kayal A. H.,

Mezger A. C.,

Rossel J.

Publication year - 1981

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221080220

Subject(s) - quantum tunnelling , luminescence , exciton , recombination , atomic physics , electron , excitation , polarization (electrochemistry) , physics , population , condensed matter physics , chemistry , optics , quantum mechanics , biochemistry , demography , sociology , gene

Tunnelling recombination luminescence in CsI :Na crystals is studied by means of linear polarization, magnetic circular polarization, and optical detection of ESR either under or after X‐ray irradiation. Results are well interpreted in terms of a self‐trapped exciton (STE) scheme as the final emitting state of tunnelling recombination; here, in the present case with tunnelling, the population for each STE sublevel is derived from the thermal equilibrium spin populations of trapped electrons (Na O ) and holes (V k ) instead of the usual creation rate in UV light excitation case.

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